Abstract
	We have measured the chemical composition of thin silicon and titanium boride layer by use of Auger electron microscopy method.  The electron beam had the power of 3 keV and was focused to the diameter smaller than about 20?m. The spectrum of studied thin silicon layer contains the elements as Si (78 a 91 eV), O (495 eV), Si (1588 eV) and thin TiB layer contains the elements as B (197 eV), C (272 eV), Ti (418 eV), O (511 eV) and Fe (703 eV). The slight energy deviations in spectra of only several eV  were caused by the chemical bond or by contamination due to oxidation. By the ion argon sputtering we performed also measurement of depth profile in distribution of elements by what we determined the time increase in the content of carbon and iron at lowered boron and titanium content. By the electron scanning microscopy we observed the complex cubic carbon borides of titanium on the sputtered spots. After 45 minutes sputtering the thin TiB layer was probably fully sputtered from an austenitic  substrate, since in the sputtered spot, the cubic constituents of titanium boride were no more observed.