 |
Visits: 85097371
AMS now reading: 1
|
|
|
|
|
 |
|
|
| Nohavica D., Gladkov P., Jarchovský Z., Zelinka J. |
| DEFECT STRUCTURE MODIFICATIONS BY POROUS InP AND NON-IZOPERIODICAL HETEROJUNCTIONS GROWTH ON MICROPORES CONTAINING InP AND GaP |
Abstract
Electrochemically etched pores are accessible also in A3B5 semiconductors. In particular, pores in InP, GaAs, Ga0.49In0.51P and GaP have been investigated in our laboratory. More complex experimental data have been collected for InP, which is suitable for the preparation almost self-organized pores net. Pores layers containing current line oriented (CLO) and/or crystallographic pores (CO) have been routinely prepared. During heat treatment related to some technological applications of the InP micropores the micro bubbles have been unintentionally generated by mass transport method. Prepared micro bubbles shape depends on the type of the original micropores. CO micropores orientations are <111>, <221> and <322>. CLO pores are normally perpendicular to the (100) plane of the InP plate. The correspondence between CO pores orientation and final spherical micro bubbles in forms of rotational ellipsoids are evident. Influence of the micropores layer on the dislocation density in successive InP layer grown by LPE demonstrates reduction of the dislocation density. The best results were obtained in case of <111> oriented micropores, where dislocation density reduction approaches 0.6 of the original value in the substrate. Another potential technological advantage of the porous substrates was predicted in case of the nonizoperiodical heterostructure growth. Growth of the InAs on porous InP was tested and significant improvement in comparison with direct growth on bulk InP was obtained. Deposition of the ZnO on nanoporous GaP was tested as well and homogeneity of the layer was beter in comparison with deposition on “bulk” Si at the identical experimental condition.
|
| Keywords: Micropores in semiconductors|InP micropores|GaP nanopores|heat treatment|dislocations reduction|InAs/InP heterostructure|ZnO/GaP heterostructure| |
| No 2 (2008), p. 240-246 |
|
|
|
|
|
|
|
Editors and press
AMS online
